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VFT5202-M3 Trench MOS Barrier Schottky Rectifier

VFT5202-M3 Description

VT5202-M3, VFT5202-M3 VBT5202-M3, VIT5202-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 .

VFT5202-M3 Features

* Trench MOS Schottky technology generation 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max. 10 s, per JESD 22-

VFT5202-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. A NC VBT5202 NC K A HEATSINK VIT5202 NC A K NC K A HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 5.0 A 200 V 100 A VF at IF = 5.0 A (TJ = 125 °C) 0.65

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Datasheet Details

Part number
VFT5202-M3
Manufacturer
Vishay ↗
File Size
145.77 KB
Datasheet
VFT5202-M3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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