WNM2024 Datasheet, Mosfet, Will Semiconductor

WNM2024 Features

• Mosfet z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications WNM2024 Htt

PDF File Details

Part number:

WNM2024

Manufacturer:

Will Semiconductor

File Size:

317.57kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD

WNM2024 Application

• Applications WNM2024 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) 3 W24
• 12 W24= Device Code
• = Month (A~

TAGS

WNM2024

Will Semiconductor

📁 Related Datasheet

WNM2020 - N-Channel MOSFET (Will Semiconductor)
WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V WNM2020 Http//:.wills.

WNM2020 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V De.

WNM2020-3 - N-Channel MOSFET (VBsemi)
WNM2020-3/TR WNM2020-3/TR Datasheet .VBsemi. N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0..

WNM2021 - N-Channel MOSFET (Will Semiconductor)
WNM2021 WNM2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V ID (A) 0.55 0.45 0.3.

WNM2023 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23.

WNM2024 - N-Channel MOSFET (VBsemi)
WNM2024-VB WNM2024-VB Datasheet N-Channel 20 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.

WNM2024 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23.

WNM2025 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-2.

WNM2027 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V(BR)DSS Rds(on) (Max. mŸ) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V Id (A) 3.6 3.1 1.5 SOT-2.

WNM2027 - N-Channel MOSFET (VBsemi)
WNM2027-VB WNM2027-VB Datasheet N-Channel 20 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.