WFD7N65S Datasheet - Winsemi

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WFD7N65S Power MOSFET

WFD7N65S 650V Super-Junction Power MOSFET .
Power MOSFET is fabricated using advanced super junction technology.

WFD7N65S-Winsemi.pdf

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Datasheet Details

Part number:

WFD7N65S

Manufacturer:

Winsemi

File Size:

272.22 KB

Description:

Power MOSFET

Features

* Ultra low Rdson
* Ultra low gate charge (typ. Qg =19nC)
* 100% UIS tested

Applications

* which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Puls

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