WFD7N65S Datasheet, Mosfet, Winsemi

WFD7N65S Features

• Mosfet � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. Th

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WFD7N65S

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Winsemi

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📄 Datasheet

Description:

Power mosfet. Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it

WFD7N65S Application

• Applications which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain So

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WFD7N65S

Winsemi

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