WFP630 Datasheet - Winsemi

WFP630, Silicon N-Channel MOSFET

WFP630 Silicon N-Channel MOSFET .
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

Features

* 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 22nC)
* Fast Switching Capability
* 100%Avalanche Tested

Applications

* such as automotive, high efficiency switching for DC/DC converters, and DC motor control. G D S TO220 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current

WFP630-Winsemi.pdf