C3M0065100J Datasheet, Mosfet, Wolfspeed

C3M0065100J Features

• Mosfet TAB Drain Drain (TAB)
• C3MTM SiC MOSFET technology
• Low parasitic inductance with separate driver source pin
• 7mm of creepage distance between drain and s

PDF File Details

Part number:

C3M0065100J

Manufacturer:

Wolfspeed

File Size:

847.81kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

C3M0065100J Application

• Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies

TAGS

C3M0065100J

Wolfspeed

📁 Related Datasheet

C3M0065100J - Silicon Carbide Power MOSFET (CREE)
VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

C3M0065100K - Silicon Carbide Power MOSFET (Cree)
VDS 1000 V C3M0065100K ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

C3M0065100K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0065100K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (TAB) Features • C3MTM SiC MOSFET technology • Op.

C3M0065090D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0065090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta.

C3M0065090D - Silicon Carbide Power MOSFET (Cree)
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

C3M0065090J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Car.

C3M0065090J - Silicon Carbide Power MOSFET (Cree)
C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe.

C3M0060065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High bl.

C3M0060065D - Silicon Carbide Power MOSFET (CREE)
VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode .

C3M0060065J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC .