C3M0120100J Datasheet - Wolfspeed

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C3M0120100J Silicon Carbide Power MOSFET

C3M0120100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) .

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Datasheet Details

Part number:

C3M0120100J

Manufacturer:

Wolfspeed

File Size:

808.20 KB

Description:

Silicon Carbide Power MOSFET

Features

* C3MTM SiC MOSFET technology
* Low parasitic inductance with separate driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)
* Low ou

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Benefits
* Reduce switching losses and minimize gate ringing
* Higher system efficiency
* Reduce cooling requirements
* Increase

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C3M0120100J Silicon Carbide Power MOSFET Wolfspeed

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