AO8205A Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y VDS S 20V ID R DS (ON) (m ohm)Max 25@VGS = 4 .
5 V 5A 40@V GS = 2 .
5 V F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S1 D1/D2 S2 S OT 23 - 6 Top View 16 25 34 G1 D1/D2 G2 D1 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage VDS 20 V Gate-S ource
