AO8403 - P-Channel Enhancement Mode Field Effect Transistor
The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specificat
AO8403 Features
* VDS (V) = -20V ID = -4 A (VGS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Vol
