XP18P10GK P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP18P10GK Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic.
XP18P10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching G performance.

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Datasheet Specifications

Part number: XP18P10GK
Manufacturer: YAGEO
File Size: 186.21 KB
Datasheet: XP18P10GK-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. -100V 160mΩ -3.1A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VDS Drain-Source Voltage -100 VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG Ga

XP18P10GK Distributors

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XP18P10GK P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP18P10GK-like datasheet