XP18P10GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP18P10GM Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic.
XP18P10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP18P10GM
Manufacturer: YAGEO
File Size: 239.93 KB
Datasheet: XP18P10GM-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G -100V 180mΩ -2.7A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol

XP18P10GM Distributors

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XP18P10GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP18P10GM-like datasheet