XP2332GEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2332GEN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS RDS(ON) ▼ Surfa.
XSemi MOSFETs utilized advanced processing techniques to G achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness d.

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Datasheet Specifications

Part number: XP2332GEN
Manufacturer: YAGEO
File Size: 144.99 KB
Datasheet: XP2332GEN-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* using infrared reflow technique and suited for voltage conversion or switch applications. 600V 72Ω 51mA D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source

XP2332GEN Distributors

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XP2332GEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP2332GEN-like datasheet