0.35µm drawn Channel Length Three (CLT) and Four (CLQ) layer metal options Automated base array constructor for optimised arrays with up to 3 million gates Low Power, 0.4µ W/MHz/Gate at 3V (2-input NAND with two loads) 135ps gate delay for 2-input NAND with two loads (3V) High density staggered pad ring Wide range of package options including QFP & BGA Characterised for operation from 1.