PSC1665J-Q Datasheet - nexperia

PSC1665J-Q 650V 16A SiC Schottky diode

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature in.

PSC1665J-Q Features

* Reduced system costs

* Temperature independent fast and smooth switching performance

* Outstanding figure-of-merit (Qc x VF)

* High IFSM capability

* High power density

* System miniaturization

* Reduced EMI

* Qualified according to A

PSC1665J-Q-nexperia.pdf