Datasheet4U Logo Datasheet4U.com

PSC1665J-Q - 650V 16A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Features

  • Reduced system costs.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • System miniaturization.
  • Reduced EMI.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

📥 Download Datasheet

Datasheet preview – PSC1665J-Q

Datasheet Details

Part number PSC1665J-Q
Manufacturer nexperia
File Size 286.92 KB
Description 650V 16A SiC Schottky diode
Datasheet download datasheet PSC1665J-Q Datasheet
Additional preview pages of the PSC1665J-Q datasheet.

📁 Similar Datasheet

  • PSC126-7iR - 6...12 A Switching Regulators (Power-One)
  • PSC128-7iR - 6...12 A Switching Regulators (Power-One)
  • PSC128-7iR - Positive Switching Regulators (Power-One AG)
  • PSC128-7iR - Positive Switching Regulators (Melcher AG)
  • PSC129-2 - 6...12 A Switching Regulators (Power-One)
  • PSC156-7iR - 6...12 A Switching Regulators (Power-One)
  • PSC158-7iR - 6...12 A Switching Regulators (Power-One)
  • PSC158-7iR - Positive Switching Regulators (Power-One AG)
  • PSC158-7iR - Positive Switching Regulators (Melcher AG)
  • PSC159-2 - 6...12 A Switching Regulators (Power-One)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PSC1665J-Q 650 V, 16 A SiC Schottky diode in D2PAK R2P for automotive applications 7 March 2025 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.
Published: |