FDC6306P - P-Channel MOSFET
These P *Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on *state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptiona
FDC6306P Features
* 1.9 A,
* 20 V. RDS(ON) = 0.170 W @ VGS =
* 4.5 V RDS(ON) = 0.250 W @ VGS =
* 2.5 V
* Low Gate Charge (3 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* SuperSOTt
* 6 Pack
