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AOU460 - N-Channel MOSFET

Datasheet Summary

Description

The AOU460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOU460 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 25V ID = 25 A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 25 25 70 20 20 30 15 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy 0.1mH Power.

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Datasheet Details

Part number AOU460
Manufacturer Alpha & Omega Semiconductors
File Size 110.33 KB
Description N-Channel MOSFET
Datasheet download datasheet AOU460 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOU460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU460 is Pb-free (meets ROHS & Sony 259 specifications). AOU460L is a Green Product ordering option. AOU460 and AOU460L are electrically identical. TO-251 D Features VDS (V) = 25V ID = 25 A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.
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