Datasheet Details
| Part number | 2SD862 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.62 KB |
| Description | NPN Transistor |
| Datasheet | 2SD862-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD862.
| Part number | 2SD862 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.62 KB |
| Description | NPN Transistor |
| Datasheet | 2SD862-INCHANGE.pdf |
|
|
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·High Collector Current-IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD862 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
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