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SI2318CDS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40V.
  • ID = 5.6 A (VGS = 10V).
  • RDS(ON) ＜ 42mΩ (VGS = 10V).
  • RDS(ON) ＜ 51mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 D G 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=70℃ Ta=25℃ Pulsed Drain C.

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SMD Type N-Channel MOSFET SI2318CDS (KI2318CDS) ■ Features ● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON) ＜ 42mΩ (VGS = 10V) ● RDS(ON) ＜ 51mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 D G 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=70℃ Ta=25℃ Pulsed Drain Current Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range Tc=25℃ Tc=70℃ Ta=25℃ Ta=70℃ Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 40 ±20 5.6 4.5 4.