Overview
- VDS (V) = 40V
- ID = 3.9 A (VGS = 10V)
- RDS(ON) ＜ 45mΩ (VGS = 10V)
- RDS(ON) ＜ 58mΩ (VGS = 4.5V) +0.1 2.4 -0.1 SOT-23
- 9 +0.1 -0.1
- 4 +0.1 -0.1 3 1 2
- 95 +0.1 -0.1 1.9 +0.1 -0.1 G1 S2 3D 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1
- 4 MOSFET Unit: mm
- 1 +0.05 -0.01
- Source
Datasheets by Manufacturer
- SI2318DS-T1-GE3 — VBsemi — N-Channel MOSFET
- Si2318DS — Vishay — N-Channel 40-V (D-S) MOSFET
- SI2318CDS — Vishay — N-Channel 40V MOSFET
- SI2318A — Micro Commercial Components — N-Channel MOSFET
- SI2318A — UMW — SOT-23-3L Plastic-Encapsulate MOSFET
- SI2310 — PUOLOP — N-channel MOSFET
- Si2319 — Nanxin — P-Channel Enhancement MOSFET
- Si2312 — SiPU — N-Channel MOSFET
- Si2316BDS — Vishay — N-Channel 30-V (D-S) MOSFET
- SI2315BDS — Vishay — P-Channel MOSFET
