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MRF185 - LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF185/D Advance Information The RF MOSFET Line MRF185 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET RF POWER Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D G G S (FLANGE) D CASE 375B–02, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Storage Temperature Range Operating Junction Temperature Total Device Dissipation @ TC = 25°C Derate above 25°C Symbol VDSS VGS Tstg TJ PD Value 65 ± 20 – 65 to +150 200 250 1.
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