| Part Number | 2SC3356 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
0.4 −0.05
+0.1
PACKAGE DIMENSIONS .
* Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz * High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base . |
2SC3356 Datasheet and Specifications PDF
The 2SC3356 is a NPN Silicon Transistor.
Key Specifications
| Package | TO-236-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Width | 1.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | 2SC3356 Datasheet |
|---|---|
| Description | NPN Transistors |
| Manufacturer | EVVO |
| Overview | 2SC3356 NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz . Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector c. |
| Part Number | 2SC3356 Datasheet |
|---|---|
| Description | Transistor |
| Manufacturer | Prisemi |
| Overview |
The 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps .
* Low Noise and High Gain * High Power Gain 2SC3356 Transistor 3 - Collector 1 - Base 2 - Emitter Top View Mechanical Characteristics * Lead finish:100% matte Sn(Tin) * Mounting position: Any * Qualified max reflow temperature:260℃ * Device meets MSL 1 requirements * Pure tin plating: 7 ~ 17 um. |
| Part Number | 2SC3356 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
NPN Silicon Epitaxial Planar Transistor 2SC3356
Features
Low noise and high gain High power gain RoHS compliant with Halogen-free
Mechanic al Data
Case: SOT-23 Molding compound: UL flammabi.
* Low noise and high gain * High power gain * RoHS compliant with Halogen-free Mechanic al Data * Case: SOT-23 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number 2SC3356-Q 2SC3. |