0.150 Datasheet | Specifications & PDF Download

2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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Elektronische Bauelemente 1.5KE Series Voltage 6.8V ~ 550V 1500W Peak Power TVS A suffix of -C specifies halogen & RoHS compliant FEATURES Plasti

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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CMP150N03/CMB150N03/CMI150N03 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 150N03 is N-ch MOSFETs wit

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TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE  E-Bike  Low drain−source ON resistance : RDS (ON) =

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 pac

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54150 DM54150 DM74150 54151A DM54151A DM74151A Data Selectors Multiplexers June 1989 54150 DM54150 DM74150 54151A DM54151A DM74151A Data Selectors M

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www.DataSheet4U.com Ordering number : ENN7250 Thick-Film Hybrid IC STK412-150 Two-Channel Shift Power Supply Audio Power Amplifier ICs 150W + 150 W

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IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE

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TC1508A 、TC1508A  MOS  、、   （1.6Ω）  1.8A/, 2.5A   SOP-16 、TC1508A  、TC1508A ek NC 1 16 OUTA T INA 2 15 PGND INB 3 14

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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Features  Low power consumption  Low voltage drop  Low temperature coefficient AF75XXM 150mA Low Power LDO  High input voltage (up to 15V)  Outp

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