0.5-6.0GHz Datasheet | Specifications & PDF Download

BGT60UTR11AIP Datasheet BGT 60UTR11AIP 60 GHz radar sensor with antennas in package Features • Integrated state machine for low-power and real time op

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CHA2193-99F 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193-99F is a three stages low noise amplifier. It is design

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BGT60TR13C E6327 BGT60TR13C Datasheet V2.4.9 Features • 60 GHz radar sensor for FMCW operation • 5.5 GHz bandwidth • Antenna-in-package (6.5 x 5.0 x 0

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BGT 60ATR24C E6327 Datasheet BGT60ATR24C 60 GHz radar sensor Features • 60 GHz radar sensor for FMCW operation • 4 GHz bandwidth • 2 TX / 4 RX channel

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HFA3926 Data Sheet July 1998 File Number 4282.2 2.0GHz - 2.7GHz 250mW Power Amplifier The Intersil HFA3926 is an integrated power amplifier in a low c

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® ISL3090 Data Sheet June 2003 FN8045.1 www.DataSheet4U.com 10GHz VCO The ISL3090 is a 10GHz SiGe monolithic VCO circuit designed to simplify and r

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LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range Features Frequency Range: 40MHz to 10GHz n Linear Dynamic Range: Up to 57dB n Ac

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Green 50GHz Compact Fiber Optical Interleaver CFOI050GHz Oplink’s compact, low-dispersion interleavers greatly expand wavelength channel counts in DW

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Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resi

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CMD295C4 ® 2-20 GHz Driver Amplifier Product Overview The CMD295C4 is a wideband driver amplifier housed in a leadless surface mount package ideall

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Data Sheet Fully Differential, 10 GHz ADC Driver with 10 dB Gain ADL5580 FEATURES −3 dB bandwidth: 10.0 GHz Preset 10 dB gain, can be reduced by add

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CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2093 is a two-stage wide band monolithic low noi

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Order this document by MC12034A/D 2.0GHz Dual Modulus Prescaler MC12034A MC12034B The MC12034A can be used with CMOS synthesizers requiring positiv

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EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate ps

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RF SWITCH CG2430X1 En0te.1r atoSh6o.r0tGDoHczumSePn3t/TTitSlewNiatcmhe Here DESCRIPTION  The CG2430X1 is a pHEMT GaAs SP3T (Single Pole Three Throw)

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LTC5596 Features 100MHz to 40GHz Linear-in-dB RMS Power Detector with 35dB Dynamic Range Description n Ultra Wide Matched Input Frequency Range: 1

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CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic l

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RF Low Noise FET CE3521M4 20 GHz LoEwnteNr oa iSsheorFtEDTociunmDenuta/TlitMleoNladmPe lHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Origina

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