0.510-INCH Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

(36 views)

(25 views)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 750V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot

(24 views)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5108 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE =

(15 views)

(14 views)

(13 views)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5103 DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage ·Compl

(13 views)

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25m

(13 views)

Schottky Barrier Rectifier INCHANGE Semiconductor MBR15100 FEATURES ·Metal of siliconrectifier, majonty carrier conducton ·Guard ring for transient

(12 views)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltag

(12 views)

Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv

(11 views)

isc N-Channel MOSFET Transistor AOD510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

(11 views)

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltag

(10 views)

0.510-INCH (13MM) SEVEN SEGMENT DISPLAYS YELLOW MAN5350/5360 GREEN MAN5450/5460 PACKAGE DIMENSIONS 10° 0.049 (1.25mm) 0.291 (7.4mm) A RED HER MAN575

(9 views)

0.510-INCH (13MM) SEVEN SEGMENT DISPLAYS YELLOW MAN5350/5360 GREEN MAN5450/5460 PACKAGE DIMENSIONS 10° 0.049 (1.25mm) 0.291 (7.4mm) A RED HER MAN575

(9 views)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5109 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE =

(9 views)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearit

(9 views)

isc N-Channel MOSFET Transistor AOI510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

(9 views)

(8 views)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4510 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Hig

(8 views)