.
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IRF510 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for .
INCHANGE
ST1510FX - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 750V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot.
Inchange Semiconductor
KTB2510 - Silicon PNP Power Transistors
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltag.
INCHANGE
2SC5103 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5103 DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage ·Compl.
INCHANGE
2SC5100 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearit.
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MBR15100 - Schottky Barrier Rectifier
Schottky Barrier Rectifier INCHANGE Semiconductor MBR15100 FEATURES ·Metal of siliconrectifier, majonty carrier conducton ·Guard ring for transient .
INCHANGE
2SD1510 - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·.
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KTC5103L - Silicon NPN Power Transistors
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC5103L DESCRIPTION ·High Collector Current-IC= 5A ·Good Linearit.
INCHANGE
2N5108 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5108 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = .
INCHANGE
2SC5101 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearit.
Inchange Semiconductor
KTD1510 - Silicon NPN Power Transistors
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltag.
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HBR15100 - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
INCHANGE
2N5109 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5109 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = .
INCHANGE
2SC4510 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4510 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Hig.
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IRFU4510 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v.
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AOD510 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOD510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis.
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AOI510 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOI510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis.
Micron
MTFDDAK128MAZ - M510 2.5-Inch SATA NAND Flash SSD
M510 2.5-Inch NAND Flash SSD Features M510 2.5-Inch SATA NAND Flash SSD MTFDDAK128MAZ, MTFDDAK256MAZ Features • Micron® 20nm MLC NAND Flash • RoHS-co.
