0.510-INCH Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

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iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25m

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isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510G ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 13.5mΩ (max) ·Enhancement mode ·Fast Switc

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearit

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isc N-Channel MOSFET Transistor IRFR4510, IIRFR4510 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.9mΩ ·Enhancement mode: ·100% avalanche

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5103 DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage ·Compl

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isc N-Channel MOSFET Transistor AOD510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltag

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Isc N-Channel MOSFET Transistor IRFS4510 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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isc N-Channel MOSFET Transistor IRFB4510，IIRFB4510 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching S

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearit

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isc N-Channel MOSFET Transistor AOI510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltag

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4510 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Hig

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC5103L DESCRIPTION ·High Collector Current-IC= 5A ·Good Linearit

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M510 2.5-Inch NAND Flash SSD Features M510 2.5-Inch SATA NAND Flash SSD MTFDDAK128MAZ, MTFDDAK256MAZ Features • Micron® 20nm MLC NAND Flash • RoHS-co

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