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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MO

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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www.DataSheet4U.com FQP10N60C/FQPF10N60C FQP10N60C/FQPF10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode p

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60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv

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IMCQ120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj =

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with

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UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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600V High and Low Side Driver SLM2110 PRODUCT SUMMARY • VOFFSET • IO+/• VOUT • ton/off (typ.) • Delay Matching (typ.) 600 V max. 1 A / 1.6 A 10 V -

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www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mo

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