PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-.
Infineon Technologies Corporation
136
06N03LA - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod.
Excelliance MOS
67
A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.
Pan Jit International
30
06N03 - 25V N-Channel MOSFET
PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), [email protected],IDS@30A=9mΩ • Advanced trench proce.
Excelliance MOS
13
EMB06N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S.
IPS
12
FTP06N03N - N-Channel MOSFET
FTP06N03N N-Channel MOSFET Applications: • Automotive/Telecom • DC Motor Control • Class D Amplifier • Uninterruptible Power Supply (UPS) Features: •.
IPS
9
FTD06N03NA - N-Channel MOSFET
N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi.
Infineon
7
IPD06N03LAG - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, l.
Infineon
6
IPD06N03LZG - Power-Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, .
Infineon Technologies AG
6
IPD06N03LA - OptiMOS 2 Power-Transistor
IPD06N03LA IPU06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target appli.
Infineon Technologies AG
6
IPF06N03LA - OptiMOS 2 Power-Transistor
IPF06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(o.
Pan Jit International
6
PJD06N03 - N-Channel Enhancement Mode MOSFET
www.DataSheet4U.com PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), [email protected],IDS@30A=9mΩ • .
Cystech Electonics
6
MTB06N03J3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C441J3 Issued Date : 2009.03.02 Revised Date : Page.
Excelliance MOS
6
EMB06N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 26A G UIS, Rg 10.
Excelliance MOS
5
EMB06N03E - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100.
Excelliance MOS
5
EMB06N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 70A N Channel MOSFET UIS, Rg 10.
Infineon Technologies AG
5
IPD06N03L - OptiMOS Buck converter series
IPD06N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID 30 5.9 50 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Res.
Infineon Technologies AG
5
IPS06N03LA - OptiMOS 2 Power-Transistor
IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to.
Cystech Electonics
5
MTA06N03NJ3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C442J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7 MTA06N03.
Excelliance MOS
5
EMB06N03H - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S.
Excelliance MOS
4
EMB06N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 18A G UIS, Rg 100% Tested S.