PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-.
Infineon Technologies Corporation
06N03LA - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod.
Excelliance MOS
A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.
IPS
FTP06N03N - N-Channel MOSFET
FTP06N03N N-Channel MOSFET Applications: • Automotive/Telecom • DC Motor Control • Class D Amplifier • Uninterruptible Power Supply (UPS) Features: •.
Excelliance MOS
EMB06N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S.
Pan Jit International
06N03 - 25V N-Channel MOSFET
PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench proce.
Cmos
CMD06N03 - N-Ch 30V Fast Switching MOSFETs
CMD06N03 /CMU06N03 N-Ch 30V Fast Switching MOSFETs General Description The 06N03 is the highest performance trench N-ch MOSFETs with extreme high ce.
Cmos
CMU06N03 - N-Ch 30V Fast Switching MOSFETs
CMD06N03 /CMU06N03 N-Ch 30V Fast Switching MOSFETs General Description The 06N03 is the highest performance trench N-ch MOSFETs with extreme high ce.
Excelliance MOS
EMB06N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 70A N Channel MOSFET UIS, Rg 10.
Infineon
IPD06N03LZG - Power-Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, .
Excelliance MOS
EMA06N03AN - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.
Cystech Electonics
MTA06N03NJ3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C442J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7 MTA06N03.
Infineon
IPD06N03LAG - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, l.
Excelliance MOS
EMB06N03E - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100.
Cystech Electonics
MTB06N03J3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C441J3 Issued Date : 2009.03.02 Revised Date : Page.
Infineon
IPF06N03LAG - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, l.
Infineon
IPU06N03LZG - Power-Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, .
MagnaChip
MDU06N031 - N-Channel MOSFET
MDU06N031 Single N-Channel Trench MOSFET 60V MDU06N031 Single N-channel Trench MOSFET 60V, 100A, 3.1mΩ General Description The MDU06N031 uses advanc.
MagnaChip
MDP06N033 - N-Channel MOSFET
MDP06N033– Single N-Channel Trench MOSFET 60V MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3mΩ General Description The MDP06N033 uses advan.
Infineon Technologies AG
IPB06N03LA - OptiMOS 2 Power-Transistor
IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle.
Infineon Technologies
IPU06N03LAG - Power-Transistor
www.datasheet4u.com IPD06N03LA G IPS06N03LA G IPF06N03LA G IPU06N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc conver.