100-dB Datasheet | Pinout, Features, Price Comparison & PDF

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Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT DD B6U 100 N 16 RRDiode Module with Chopper-IGBT Elektrische Eigenschaft

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FDB0260N1007L N-Channel PowerTrench® MOSFET FDB0260N1007L N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ March 2016 Features „ Max rDS(on) = 2.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL86062-F085 Features • Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) =

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www.DataSheet4U.com 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellen

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MOSFET – POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 DATA SHEET www.onsemi.com Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A

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D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Desc

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MOSFET – N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL0200N100 Features  Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) = 95

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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MOSFET – N-Channel, POWERTRENCH) 100 V, 240 A, 2.6 mW FDBL86063-F085 Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 7

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32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplif

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WD3124DB 1000mA Buck/Boost Charge Pump Flash LED Driver WD3124DB Http//:www.sh-willsemi.com Description The WD3124DB is a current-regulated charge p

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2 TYPE B4F Balun Transformers for Surface Mounting B5FL Meeting Your Needs TYPE B4F: Surface Mount B4F TYPE B5FL: Surface Mount B5FL Features •

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PCM5100, PCM5101, PCM5102 www.ti.com SLAS764B – MAY 2011 – REVISED SEPTEMBER 2012 2VRMS DirectPath™, 112/106/100dB Audio Stereo DAC with 32-bit, 38

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T

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www.DataSheet4U.com 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excell

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www.DataSheet4U.com 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excell

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17.65-33.65 GHz GaAs MMIC Receiver April 2007 - Rev 05-Apr-07 Features Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input

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30.0-46.0 GHz GaAs MMIC Receiver May 2005 - Rev 13-May-05 Features Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise figure of 3.5 dB a

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D10040230P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040230PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Desc

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