100H Datasheet | Specifications & PDF Download

ESMT Flash „ FEATURES y Single supply voltage 2.7~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MH

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ESMT Flash FEATURES Single supply voltage 2.3~3.6V Standard, Dual SPI Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MH

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www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A

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www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A

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DSA30C100HB 100 V, 2 x 15 A High-Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Features ■ Extremely low switching losses Diode

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MCB S Series Data Sheet Product Name Series Size Version MCB S Series Ferrite Chip Bead EIAJ 1005 - 4516 A18 Ferrite Chip Bead (MCB S Series) This

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DSA50C100HB 100 V, 2 x 25 A High-Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Features ■ Extremely low switching losses Diode

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www.DataSheet4U.com EN25F16 EN25F16 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector FEATURES • Single power supply operation - Full volt

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www.DataSheet4U.com VTB Process Photodiodes VTB100H PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded p

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A100HI Series Ultra-High Isolation, 1.5W Single & Dual Output DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input v

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IS42S16100H IS45S16100H ® Long-term Support World Class Quality 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JULY 2023 FEATURES • C

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2MBI100HJ-120-50 Power Module (V series) 1200V / 100A / 2-in-1 package ■ Features High speed switching Voltage drive Low Inductance module structure ■

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www.vishay.com VS-100BGQ100HF4 Vishay Semiconductors High Performance Schottky Rectifier, 100 A Cathode Anode PowerTab® PRODUCT SUMMARY Package I

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R SCHOTTKY BARRIER DIODE HBR10100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 100 V 175 ℃ 0.7V （@Tj=125℃） z z APPLICATIO

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< Silicon RF Power MOS FET (Discrete) > RD100HHF1C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION RD100HHF1C is a MOS FET ty

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RELAY HLS6-23F HLS6-4100H HLS6-4100H-1 12.5x7.5x10 1C Au+Ag 1A:125VAC/30VDC 15.5x10.5x11.8 1A/1C Au+Ag 1A:120VAC/24VDC 3A:120VAC/24VDC 15.5x10.5x11

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Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

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www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A

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