100H Datasheet | Specifications & PDF Download

www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A

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www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A

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www.DataSheet4U.com EN25F16 EN25F16 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector FEATURES • Single power supply operation - Full volt

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Q2BOOST Module NXH400B100H4Q2F2SG, NXH400B100H4Q2F2PG The NXH400B100H4Q2F2xG is a power module containing two channel flying capacitor boost. The int

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www.DataSheet4U.com Opto Coupler • High Current Gain • High Isolation Voltage • RoHS Compliant OC100HG ABSOLUTE MAXIMUM RATINGS LED • Forward DC Cu

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STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data 4.%  50 Features • Forward current: 1 x 20 and

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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Q2BOOST Module NXH400B100H4Q2F2SG, NXH400B100H4Q2F2PG The NXH400B100H4Q2F2xG is a power module containing two channel flying capacitor boost. The int

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< Silicon RF Power MOS FET (Discrete) > RD100HHF1C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION RD100HHF1C is a MOS FET ty

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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F2 Boost Power Module NXH200B100H4F2SG, NXH200B100H4F2SG-R The NXH200B100H4F2SG is a power module containing high−performance IGBTs with rugged anti−

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Six-Element SMD Photodiode Array OPR2100, OPR2100T, OPR2100HS, OPR2100HST Features:  Six-PIN photodiode array  High-temperature chip carrier  Close

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GD100HFU120C1SD STARPOWER SEMICONDUCTOR GD100HFU120C1SD 1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra swi

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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GD100HFX170C1S STARPOWER SEMICONDUCTOR GD100HFX170C1S 1700V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Chann

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors

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P6SMB6.8(A)H – P6SMB220(A)H Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Low pr

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