100H Datasheet | Specifications & PDF Download

F2 Boost Power Module NXH200B100H4F2SG, NXH200B100H4F2SG-R The NXH200B100H4F2SG is a power module containing high−performance IGBTs with rugged anti−

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Q2BOOST Module NXH400B100H4Q2F2SG, NXH400B100H4Q2F2PG The NXH400B100H4Q2F2xG is a power module containing two channel flying capacitor boost. The int

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Q2BOOST Module NXH400B100H4Q2F2SG, NXH400B100H4Q2F2PG The NXH400B100H4Q2F2xG is a power module containing two channel flying capacitor boost. The int

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www.DataSheet4U.com Opto Coupler • High Current Gain • High Isolation Voltage • RoHS Compliant OC100HG ABSOLUTE MAXIMUM RATINGS LED • Forward DC Cu

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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www.DataSheet4U.com EN25F16 EN25F16 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector FEATURES • Single power supply operation - Full volt

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P6SMB6.8(A)H – P6SMB220(A)H Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Low pr

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Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package NXH450B100H4Q2F2, NXH450B100H4Q2F2PG

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Six-Element SMD Photodiode Array OPR2100, OPR2100T, OPR2100HS, OPR2100HST Features:  Six-PIN photodiode array  High-temperature chip carrier  Close

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Six-Element SMD Photodiode Array OPR2100, OPR2100T, OPR2100HS, OPR2100HST Features:  Six-PIN photodiode array  High-temperature chip carrier  Close

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Si/SiC Hybrid Module – EliteSiC, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2S1G, SNXH600B

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Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B100H4Q2F2

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F2 Boost Power Module NXH200B100H4F2SG, NXH200B100H4F2SG-R The NXH200B100H4F2SG is a power module containing high−performance IGBTs with rugged anti−

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NSR02100HT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and volta

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Registered Hex TTL/ECL Translator The MC10H/100H604 is a 6–bit, registered, dual supply TTL to ECL translator.

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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