www.DataSheet4U.com Advanced Power MOSFET FEATURE.
Fairchild
SSH10N60A - advanced power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
TRinno
TMP10N60A - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP10N60.
Fairchild Semiconductor
SSS10N60A - Advanced Power MOSFET
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
Infineon Technologies AG
SGP10N60A - Fast IGBT in NPT-technology
SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Shor.
Infineon Technologies AG
SKB10N60A - Fast IGBT
SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined w.
Infineon Technologies AG
SKW10N60A - Fast IGBT
SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode 75% lower Eoff compared to previo.
Infineon Technologies AG
SGW10N60A - Fast IGBT in NPT-technology
SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Shor.
Huajing Microelectronics
CS10N60A8HD - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS10N60 A8HD ○R General Description： CS10N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel.
Huajing Microelectronics
CS10N60A8R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS10N60 A8R ○R General Description： CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
Fairchild Semiconductor
SSP10N60A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
TRinno
TMP10N60AG - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP10N60.
IXYS Corporation
IXGP10N60A - High speed IGBT
www.DataSheet4U.com Preliminary data Low VCE(sat) IGBT High speed IGBT VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 20 A 20 A V.
Fairchild Semiconductor
10N60A - Advanced Power MOSFET
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
Infineon
G10N60A - Fast IGBT
SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand .
CR Micro
CS10N60A0R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS10N60 A0R General Description： VDSS 600 CS10N60 A0R, the silicon N-channel Enhanced ID 10 VDMOSFETs, is ob.
Infineon Technologies AG
SKP10N60A - Fast IGBT
SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode 75% lower Eoff compared to previo.
Infineon Technologies AG
SGB10N60A - Fast IGBT
SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand .
Samsung Electronics
SSF10N60A - Advanced Power MOSFET
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TRinno
TMPF10N60AG - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP10N60.
TRinno
TMPF10N60A - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP10N60.