10N60F Datasheet | Specifications & PDF Download

BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and s

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor wh

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10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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Silicon N-Channel Power MOSFET FEATURES  Fast Switching Pb  ESD Improved Capability Lead-free  ow Gate Charge (Typical Data:38nC)  Low Reve

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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Silicon N-Channel Power MOSFET CS10N60F A9R ○R General Description： CS10N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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Silicon N-Channel Power MOSFET CS10N60F A9HD ○R General Description： CS10N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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N R N-CHANNEL MOSFET JCS10N60T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 600 V Rdson（@Vgs=10V） 0.75Ω Qg 34 nC z z z UPS APPLICATIONS z Hi

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DX10N60R/DX10N60F N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology,

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Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features • IGBT VCE (sat)=1.5V typ. (

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ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC

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CYStech Electronics Corp. Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFE

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Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Features and Benefits: TO220F  Advanced MOSFET process technology  Speci

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QM10N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description The QM10N60F is the highest performance N-ch MOSFETs with speci

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DTP10N60SJ/DTP10N60FSJ/DTU10N60SJ/DTL10N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600

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