10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET .
BL10N60F - N-Channel Power MOSFET
Silicon N-Channel Power MOSFET FEATURES Fast Switching Pb ESD Improved Capability Lead-free ow Gate Charge (Typical Data:38nC) Low Reve.SVF10N60FG - 600V N-CHANNEL MOSFET
SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect.10N60F - N-CHANNEL MOSFET
10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% av.SVD10N60F - 600V N-CHANNEL MOSFET
SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor wh.SVF10N60F - 600V N-CHANNEL MOSFET
SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect.NGTB10N60FG - N-Channel IGBT
Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features • IGBT VCE (sat)=1.5V typ. (.CS10N60F - N-CHANNEL MOSFET
BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and s.KF10N60F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,.CS10N60FA9HD - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS10N60F A9HD ○R General Description: CS10N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s.CS10N60FA9R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS10N60F A9R ○R General Description: CS10N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel.MTN10N60FP - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFE.ICE10N60FP - N-Channel MOSFET
ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC .QM10N60F - MOSFETs
QM10N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description The QM10N60F is the highest performance N-ch MOSFETs with speci.DTP10N60FSJ - N-Channel Super Junction Power MOSFET
DTP10N60SJ/DTP10N60FSJ/DTU10N60SJ/DTL10N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600.DX10N60F - N-Channel MOSFET
DX10N60R/DX10N60F N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology, .SSF10N60F - N-Channel MOSFET
Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Features and Benefits: TO220F Advanced MOSFET process technology Speci.JCS10N60FT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS10N60T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 600 V Rdson(@Vgs=10V) 0.75Ω Qg 34 nC z z z UPS APPLICATIONS z Hi.