10N65-Q Datasheet | Specifications & PDF Download

Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 FEATURES  Extremely High dv/dt Capability.  100% AvalancheTtes

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10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:201

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Empower The World InPower Product Lines Confidential Free Datasheet http://www.datasheet4u.com/ Discrete Power Products Empower The World IPS Bas

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10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP10N65C3D1M VCES = 650V IC110 = 7A V CE(sat) 

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low

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ITA10N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.86Ω ID 10A Features:

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT10N65 & AOTF10N65 have been fabricated using an advanced hi

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH110N65C4 VCES = 650V IC110 = 110A V CE(sat)  2.35V tfi

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP10N65C3 VCES = 650V IC110 = 1

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Silicon N-Channel Power MOSFET CS10N65F A9R ○R General Description： CS10N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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Silicon N-Channel Power MOSFET CS10N65 A8R ○R General Description： CS10N65 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltag

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MDF10N65B N-channel MOSFET 650V MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description The MDF10N65B MOSFET are produced using advanced Ma

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N R N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson（@Vgs=10V） 0.95Ω Qg 34 nC z z z UPS APPLICAT

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FQP10N65/FQPF10N65 650V,10A N-Channel MOSFET General Description Product Summary The FQP10N65 & FQPF10N65 have been fabricated using an advanced hi

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