10N70-Q Datasheet | Specifications & PDF Download

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UNISONIC TECHNOLOGIES CO., LTD 10N70T Preliminary 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70T is a high voltage and high current

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AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Require

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UNISONIC TECHNOLOGIES CO., LTD 10N70Z-Q Preliminary 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N70Z-Q is a high voltage and high cur

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N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 10A 700V 1.10Ω 38.0nC ⚫ ⚫ ⚫ LED APPLICAT

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N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 10A 700V 1.10Ω 38.0nC ⚫ ⚫ ⚫ LED APPLICAT

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Silan Microelectronics SVF10N70F/FJ_Datasheet 10A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N70F/FJ is an N-channel enhancement mode power MOS

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UNISONIC TECHNOLOGIES CO., LTD 10N70Z 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N70Z is a high voltage and high curr en

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 1.2Ω ID 10A G UIS, 100% Tested S

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Chip Bead (CIB/CIM Series) CIB, CIM Series are used for EMI suppression filters.These beads suppress EMI noise by increased impedance, especially by i

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AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G

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Advanced Power Electronics Corp. AP10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested Simple Drive Requirement Fast Switching

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UNISONIC TECHNOLOGIES CO., LTD 10N70-C 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET,

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UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-Q is a high voltage and high curre

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N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 10A 700V 1.10Ω 38.0nC ⚫ ⚫ ⚫ LED APPLICAT

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UNISONIC TECHNOLOGIES CO., LTD 10N70-ML 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-ML is a high voltage power MOSFET combines advanc

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SLP10N70C / SLF10N70C SLP10N70C/SLF10N70C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar

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SLP10N70C / SLF10N70C SLP10N70C/SLF10N70C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar

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Silicon N-Channel Power MOSFET CS10N70 A8D ○R General Description： CS10N70 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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