11NM60 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 11NM60 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60 is an Super Junction MOSFET Structure. It

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

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isc N-Channel MOSFET Transistor STP11NM60ND FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source

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UNISONIC TECHNOLOGIES CO., LTD 11NM60-U2 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60-U2 is a Super Junction MOSFET Structur

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STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS (@TJmax) STB11NM60N

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B11NM60-VB B11NM60-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 at VG

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STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET

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STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220

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www.DataSheet4U.com STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (w

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

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www.DataSheet4U.com STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation

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STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS (@TJmax) STB11NM60N

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STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET General features www.Da

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STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Featur

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www.DataSheet4U.com N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM6

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STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS (@TJmax) STB11NM60N

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 ·FEATURES ·Typical RDS(on)=0.4Ω ·Low input capacitance and gate charge ·Low gate in

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STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP S

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

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isc N-Channel MOSFET Transistor STU11NM60ND FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source

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