120N03 Datasheet | Specifications & PDF Download

DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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HM120N03KA N-Channel Enhancement Mode Power MOSFET Description The HM120N03KA uses advanced trench technology and design to provide excellent RDS(ON)

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MT120N03F MT120N03F MT120N03F PDFN5*6-8L Shenzhen Meitai Microelectronics Co., Ltd WWW.MTWDZ.CN MT120N03F Shenzhen Meitai Microelectronics Co., L

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NP120N03D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to

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N-Channel Super Trench Power MOSFET Description The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient h

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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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UNISONIC TECHNOLOGIES CO., LTD UT120N03 120A, 30V N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT120N03 is a N-channel power MOSFET using UTC’s advanc

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SLM120N03G SLM120N03G 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technol

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XW120N03 N-Ch Fast Switching MOSFETs PDFN5*6/30V/120A XW120N03 N-Ch 30V Fast Switching MOSFETs  Super Low Gate Charge  100% EAS Guaranteed  Green

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G120N03D3 N-Channel Enhancement Mode Power MOSFET Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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SLD120N03T SLD120N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advan

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G120N03D3 N-Channel Enhancement Mode Power MOSFET Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate

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TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON) 

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TTG120N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description  Trench Power Technology  Low RDS(

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TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON) 

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+0 1. N-Channel Enhancement Mode Power MOSFET Description The +0 1. uses advanced trench technology and design to provide excellent RDS(ON) w

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