DESCRIPTION The 120N03 uses advanced trench techno.
Infineon
BSC120N03MSG - Power MOSFET
% % %&$ #D % 0<40= # : A 0< % & 7LHZ[XLY S* BF;? ;L768AD 0 6D;H7D3 BB>;53 F;A@ ) AF74AA= 0 + * ' S' AI * ( JM 8.
Vishay
SQM120N03-1m5L - Automotive N-Channel MOSFET
SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = .
Infineon
BSC120N03LSG - Power MOSFET
OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ.
natlinear
NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET
NP120N03D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to .
Msemitek
SLM120N03G - 30V N-Channel MOSFET
SLM120N03G SLM120N03G 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technol.
Rohm
RSS120N03 - Switching
RSS120N03 Transistors Switching (30V, 12A) RSS120N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-S Protection Diode. 3) Small a.
UTC
UT120N03 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT120N03 120A, 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT120N03 is a N-channel power MOSFET using UTC’s advanc.
Infineon
IPB120N03S4L-03 - Power-Transistor
OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .
GFD
120N03 - MOSFET
DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet.
Unigroup
TTD120N03AT - 30V N-Channel MOSFET
TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) .
Unigroup
TTP120N03AT - 30V N-Channel Trench MOSFET
TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) .
Unigroup
TTG120N03GT - N-Channel Trench MOSFET
TTG120N03GT Wuxi Unigroup Microelectronics Co.,Ltd 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Char.
SeCoS
SPR120N03S-C - N-Channel Shielded Gate Trench Power MOSFET
Elektronische Bauelemente SPR120N03S-C 120A, 30V, RDS(ON) 2.2mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” .
JIEJIE
Q120N03A - N-channel Enhancement Mode Power MOSFET
JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features 30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V Advanc.
JIEJIE
JMTQ120N03A - N-channel Enhancement Mode Power MOSFET
JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features 30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V Advanc.
GOFORD
G120N03 - N-Channel Enhancement Mode Power MOSFET
G120N03D3 N-Channel Enhancement Mode Power MOSFET Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .
GOFORD
G120N03D3 - N-Channel Enhancement Mode Power MOSFET
G120N03D3 N-Channel Enhancement Mode Power MOSFET Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .
Unigroup
TTG120N03AT - 30V N-Channel Trench MOSFET
TTG120N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Trench Power Technology Low RDS(.
Msemitek
SLD120N03T - 30V N-Channel MOSFET
SLD120N03T SLD120N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advan.