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HM120N03KA Datasheet - H&M Semiconductor

HM120N03KA, N-Channel Enhancement Mode Power MOSFET

HM120N03KA N-Channel Enhancement Mode Power MOSFET .
The HM120N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
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HM120N03KA-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM120N03KA

Manufacturer:

H&M Semiconductor

File Size:

724.06 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =120A RDS(ON) =3.2mΩ (Typ) @ VGS=10V RDS(ON) =4.6mΩ (Typ) @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

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