128k Datasheet | Specifications & PDF Download

X

.

Alliance Semiconductor

AS6C2016 - 128K X 16 BIT LOW POWER CMOS SRAM

FEBRUARY 2008 January 2007 AS6C2016 512K X 8CMOS BIT LOW 128K X 16 BIT LOW POWER SRAMPOWER CMOS SRAM FEATURES Fast access time : 55ns Low power cons.
Rating: 1 (5 votes)
Motorola

MCM6226A - 128K x 8 Bit Static Random Access Memory

MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 128K X 8 Bit Static Random Access Memory The MCM6226A is a 1,048,576 bit static random access memory organiz.
Rating: 1 (4 votes)
AMIC Technology

A67L73321 - 256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM

A67L83161/A67L83181/ A67L73321/A67L73361 Series 256K X 16/18, 128K X 32/36 Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Flow-through D.
Rating: 1 (4 votes)
Cypress Semiconductor

CY7C1011CV33 - 128K x 16 Static RAM

CY7C1011CV33 2-Mbit (128 K × 16) Static RAM 2-Mbit (128 K × 16) Static RAM Features ■ Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A.
Rating: 1 (4 votes)
STMicroelectronics

M27W101 - 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM

M27W101 1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V –.
Rating: 1 (4 votes)
STMicroelectronics

M27C202 - 2 Mbit 128Kb x16 UV EPROM and OTP EPROM

M27C202 2 Mbit (128Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Curre.
Rating: 1 (4 votes)
Samsung semiconductor

KM4132G271A - 128K x 32Bit x 2 Banks Synchronous Graphic RAM

KM4132G271A 128K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES ¡Ü ¡Ü CMOS SGRAM GENERAL DESCRIPTION The KM4132G271A is 8,388,608 bits synchronou.
Rating: 1 (4 votes)
IDT

IDT71V25761S - 128K x 36 3.3V Synchronous SRAMs

128K X 36 IDT71V25761YS/S 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36 memory co.
Rating: 1 (4 votes)
Intel

P28F001BX - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L.
Rating: 1 (4 votes)
Motorola

MCM63P733A - 128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM63P733A/D Advance Information MCM63P733A 128K x 32 Bit Pipelined BurstRAM Synchro.
Rating: 1 (4 votes)
Intel Corporation

GE28F128K3 - Intel StrataFlash Memory

Intel StrataFlash® Synchronous Memory (K3/K18) 28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 (x16) Datasheet m o .c U 4 t e e h S a .
Rating: 1 (4 votes)
ISSI

IS64WV1024BLL - 128K x 8 HIGH-SPEED CMOS STATIC RAM

IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • H.
Rating: 1 (4 votes)
Micron Technology

MT5C128K8A1 - 128K x 8 SRAM

www.DataSheet4U.com SEMICONDUCTOR, INC. MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM SRAM FEATURES • High speed: 12, 15, 20 and 25ns • Multiple c.
Rating: 1 (4 votes)
ICS

IC61C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM

IC61C1024 IC61C1024L Document Title 128K x 8 High-Speed SRAM Revision History Revision No 0A 0B History Initial Draft Revise typo on page 6 and page.
Rating: 1 (4 votes)
Alliance Semiconductor Corporation

AS7C33128PFS36B - (AS7C33128PFS32B / AS7C33128PFS36B) 3.3V 128K X 32/36 pipeline burst synchronous SRAM

March 2002 ® AS7C33128PFS32A AS7C33128PFS36A 3.3V 128K X 32/36 pipeline burst synchronous SRAM Features • Organization: 131,072 words × 32 or 36 bit.
Rating: 1 (4 votes)
Weida Semiconductor

CG6263AM - 2Mb (128K x 16) Pseudo Static RAM

PRELIMINARY CG6263AM 2Mb (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typ.
Rating: 1 (4 votes)
GSI Technology

GS71108AJ - 128K x 8 1Mb Asynchronous SRAM

GS71108ATP/J/SJ/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features 128K x 8 1Mb Asynchronous SRAM 7, 8, 10, 12 ns 3.3 V VDD Center VDD an.
Rating: 1 (4 votes)
GSI Technology

GS71108ASJ - 128K x 8 1Mb Asynchronous SRAM

GS71108ATP/J/SJ/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features 128K x 8 1Mb Asynchronous SRAM 7, 8, 10, 12 ns 3.3 V VDD Center VDD an.
Rating: 1 (4 votes)
Intel

M27C128 - 128K CHMOS Production and UV EPROM

.
Rating: 1 (4 votes)
Intel

F28F010 - 1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical.
Rating: 1 (4 votes)
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts