128k Datasheet | Specifications & PDF Download

M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

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IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600

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M28010 1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s s Fast Access Time: 100 ns Single Supply Voltage: – 4.5 V t

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K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History

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P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45

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NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM October 1998 NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM General Des

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www.DataSheet4U.com W29C010 128K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C010 is a 1-megabit, 5-volt only CMOS flash memory organized as 128

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MITSUBISHI LSI. 'iF~;0,';;' ('1' MSM27C128K, -2, -3 ,\.;;~.'/;' 131 072-BIT( 16384-WORD BY 8-BIT) 'ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

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MITSUBISHI LSI. 'iF~;0,';;' ('1' MSM27C128K, -2, -3 ,\.;;~.'/;' 131 072-BIT( 16384-WORD BY 8-BIT) 'ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

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A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second

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M27C202 2 Mbit (128Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Curre

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Features • • • • • • • • • • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer

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PRELIMINARY K6R1008C1C-C/C-L, K6R1008C1C-I/C-P Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industri

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HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No 00 01 02 0

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DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128,

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Preliminary W24100 GENERAL DESCRIPTION 128K × 8 CMOS STATIC RAM The W24100 is a normal-speed, very low-power CMOS static RAM organized as 131072 ×

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W24L011A 128K × 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L011A is a high speed, low power CMOS static RAM organized as 131072 × 8 bit

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Preliminary W49F201 128K × 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 b

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Document Title 128K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History 10 Initial Revision History Insert 11 Change the Notch L

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