UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary P.
IXBF12N300 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.12N30 - 12A 300V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The U TC 12N30 is an N-ch annel mod e p.R1112N301B - LOW NOISE 150mA LDO REGULATOR
R1112N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-059-130409 OUTLINE The R1112N Series are CMOS-based voltage regulator ICs with high output voltag.IXBH12N300 - Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ 3000V 12A 3.2V Symbol VCES VC.R1112N301A - LOW NOISE 150mA LDO REGULATOR
R1112N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-059-130409 OUTLINE The R1112N Series are CMOS-based voltage regulator ICs with high output voltag.AOTF12N30 - N-Channel MOSFET
AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high volt.IXBT12N300 - Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ 3000V 12A 3.2V Symbol VCES VC.MTN12N30FP - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C993FP Issued Date : 2014.12.15 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN12N.TS12N30CS - 30V Single N-Channel 4.5V Specified AceFET
PRELIMINARY DATA SHEET For information only DC-DC Converter Control and Synchronous AceFET™ TS12N30CS – 30V Single N-Channel 4.5V Specified AceFET™ .KMB012N30QA - N-Channel Trench MOSFET
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low ga.AOT12N30 - N-Channel MOSFET
AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high volt.AOT12N30 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOT12N30 FEATURES ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On.AOTF12N30 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOTF12N30 FEATURES ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source O.NP12N30G - 300V N-Channel Enhancement Mode MOSFET
NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS.