12N30 Datasheet | Specifications & PDF Download

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) MMIX4B12N300 C1

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat)  3000V 1

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat)  3000V 1

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AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high volt

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2

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R1112N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-059-130409 OUTLINE The R1112N Series are CMOS-based voltage regulator ICs with high output voltag

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NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS

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PRELIMINARY DATA SHEET For information only DC-DC Converter Control and Synchronous AceFET™ TS12N30CS – 30V Single N-Channel 4.5V Specified AceFET™

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UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The U TC 12N30 is an N-ch annel mod e p

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R1112N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-059-130409 OUTLINE The R1112N Series are CMOS-based voltage regulator ICs with high output voltag

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AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high volt

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3

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isc N-Channel MOSFET Transistor AOT12N30 FEATURES ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On

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isc N-Channel MOSFET Transistor AOTF12N30 FEATURES ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source O

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CYStech Electronics Corp. Spec. No. : C993FP Issued Date : 2014.12.15 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN12N

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low ga

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