12N50 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (

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MDF12N50 N-channel MOSFET 500V MDF12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description The MDF12N50 uses advanced MagnaChip’s MOSFET Techno

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MDP12N50F/MDF12N50F N-channel MOSFET 500V MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description These N-channel MOSFET are prod

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FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 1

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXT

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FQP12N50/FQPF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The FQP12N50 & FQPF12N50 have been fabricated using an advanced h

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power www.DataSheet4U.com MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12

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GPT12N50 / GPT12N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power www.DataSheet4U.com MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12

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STF12N50DM2 N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Figure 1:

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FQP12N50/FQPF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The FQP12N50 & FQPF12N50 have been fabricated using an advanced h

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXT

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SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Con

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UNISONIC TECHNOLOGIES CO., LTD 12N50 Preliminary Power MOSFET 12 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 12N50 is a

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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A 500 Volts 12 Amps 400 mΩ N-CHANNEL ENHANCEMEN

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