12N50 Datasheet | Specifications & PDF Download

FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m August 2016 Fe

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated

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Final data SPW12N50C3 VDS @ Tjmax RDS(on) ID 560 0.38 11.6 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology •

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MDP12N50 N-channel MOSFET 500V MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description The MDP12N50 uses advanced MagnaChip’s MOSFET Techn

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FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 10

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FDPF12N50FT — N-Channel UniFETTM FRFET® MOSFET FDPF12N50FT N-Channel UniFETTM FRFET® MOSFET 500 V, 11.5 A, 700 mΩ November 2013 Features • RDS(on)

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MDP12N50B / MDF12N50B N-channel MOSFET 500V MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65Ω General Description The MDP/F12N50B uses advan

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UNISONIC TECHNOLOGIES CO., LTD 12N50K-MT 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50K-MT is an N-channel mode power MOSFET using UTC’

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STP12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data 7$% 72   

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MDP12N50F/MDF12N50F N-channel MOSFET 500V MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description These N-channel MOSFET are prod

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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isc N-Channel MOSFET Transistor AOB12N50 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Res

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FDB12N50F — N-Channel UniFETTM FRFET® MOSFET FDB12N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 11.5 A, 700 m Features • RDS(on) = 590 m (Typ.) @

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FQB12N50 / FQI12N50 QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistor

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low

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PolarTM Power MOSFET HiPerFETTM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP12N50PM VDSS ID25 tr

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FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 10

Rating: 1 ★ (5 votes)

FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMV12N50E ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation rugg

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