12N60 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have

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HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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WML12N60VD, WMK12N60VD, WMM12N60VD WMN12N60VD, WMP12N60VD, WMO12N60VD 600V 0.6Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high

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SLP12N60C / SLF12N60C SLP12N60C / SLF12N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET

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BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS : ， PFC 。 Purpose: These devices are well suited for high efficient switched mode power supplies,active p

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TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced pla

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SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan spee

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isc N-Channel MOSFET Transistor AOB12N60FD FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor AOT12N60 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava

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www.vishay.com SiHA12N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V)

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60

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www.DataSheet4U.com HiPerFASTTM IGBT IXGA 12N60B IXGP 12N60B VCES IC25 VCE(sat) tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet

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AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fa

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