12N60 Datasheet | Specifications & PDF Download

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced pla

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isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

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* '6 72  *' 6 72 ) ' * 6 VDS ID VGS PD TJ Tstg EAS Ciss Coss Crss VDS 9,VGS 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+]

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan spee

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BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS : ， PFC 。 Purpose: These devices are well suited for high efficient switched mode power supplies,active p

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HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free O

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HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI

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600V N-Channel MOSFETs PDF12N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS

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CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN12N60

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UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have

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GPT12N60 / GPT12N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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FHP12N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 12A,600V,RDS(on)(）0.6Ω ★ 、 ★ FHP12N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg

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Ordering number : ENA2219 NGTG12N60TF1G N-Channel IGBT 600V, 12A, VCE(sat);1.4V TO-3PF-3L http://onsemi.com Features • VCE(sat)=1.4V typ. (IC=12A,

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CYStech Electronics Corp. Spec. No. : C130FP Issued Date : 2016.03.15 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN12N6

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TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced pla

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