1306 Datasheet | Specifications & PDF Download

SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This d

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES .

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20 NAS 1303 - NAS 1316 Series Specifications Bolt, Hex Head, Close Tolerance 160,000 PSI Tensile HEAD MARKING: BASIC PART NO., APPLICABLE DASH NO.,

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KTC-FC1306 Multi-Interface ControllerKTC Confidential Key Technology Corp. FC1306T(GP) Single Chip Controller for PC ATA Card Adapters User’s Programm

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com Central TM

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES .

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2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in hi

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200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time 1302 - 1310 1302F - 1310F 1302UF - 1310UF ELECTRICAL

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200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time 1302 - 1310 1302F - 1310F 1302UF - 1310UF ELECTRICAL

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Datasheet RX130 Group Renesas MCUs 32-MHz, 32-bit RX MCUs, 50 DMIPS, up to 512-KB flash memory, R01DS0273EJ0300 Rev.3.00 Aug 09, 2018 up to 36 pins

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1.625 Min. < >< + L _.010 > www.DataSheet4U.com 1306EF Polyester (Mylar ) and Foil Capacitors Cap. µF .001 .0012 .0015 .0022 .0027 .0039 .0047 .0

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isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Complement to T

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Datasheet RX130 Group Renesas MCUs 32-MHz, 32-bit RX MCUs, 50 DMIPS, up to 512-KB flash memory, R01DS0273EJ0300 Rev.3.00 Aug 09, 2018 up to 36 pins

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SSD1306B Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product.

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200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time 1302 - 1310 1302F - 1310F 1302UF - 1310UF ELECTRICAL

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KV1913A thru GC1310 MICROWAVE PRODUCTS DIVISION ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES PRODUCT PREVIEW DESCRIPTION KEY FEATURES

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SMD Shielded Power Inductors - SDS Series SDS Series Features  RoHS compliant  Smallest size and high performance  High energy storage and very lo

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Leaded Power Chokes – BC Series BC Series Features l Compact size, high performance, low cost l With Large current loads l Toroidal shape core reduc

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2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in hi

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