13N10 Datasheet | Specifications & PDF Download

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a

(16 views)

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

(16 views)

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche Tested  Pb-free lead plating;

(13 views)

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A

(12 views)

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

(11 views)

13N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.092 at VGS = 10 V ID (A) 18 TO-220AB D FEATU

(11 views)

ISZ113N10NM5LF2 MOSFET OptiMOSTM 5 Linear FET 2, 100 V Features • Ideal for soft start in Power-over-Ethernet (PoE) application • Very low on-resista

(10 views)

FQD13N10L / FQU13N10L December 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

(9 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for

(9 views)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plat

(8 views)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

(7 views)

FQB13N10 / FQI13N10 FQB13N10 / FQI13N10 100V N-Channel MOSFET January 2001 QFETTM General Description These N-Channel enhancement mode power field

(7 views)

FQD13N10L / FQU13N10L December 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

(7 views)

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

(7 views)

FQB13N10L / FQI13N10L December 2000 QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

(7 views)

FQPF13N10L December 2000 QFET FQPF13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transis

(7 views)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistanc

(7 views)

MOSFET - Power, Single N-Channel 100 V, 13.6 mW, 52 A Product Preview NVTYS013N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design •

(7 views)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

(6 views)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

(6 views)