13N10 Datasheet | Specifications & PDF Download

13N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.092 at VGS = 10 V ID (A) 18 TO-220AB D FEATU

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FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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MOSFET - Power, Single N-Channel 100 V, 13.6 mW, 52 A Product Preview NVTYS013N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design •

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FQP13N10 January 2001 QFET FQP13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQB13N10 / FQI13N10 FQB13N10 / FQI13N10 100V N-Channel MOSFET January 2001 QFETTM General Description These N-Channel enhancement mode power field

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CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design fo

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ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME13N10A is the N-Channel logic enhancement mode power field effect transis

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistanc

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche Tested  Pb-free lead plating;

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for

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Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; Ro

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FQB13N10L / FQI13N10L December 2000 QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

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NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a

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FQD13N10 / FQU13N10 January 2001 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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FQD13N10L / FQU13N10L December 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

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FQPF13N10 January 2001 QFET FQPF13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE013N10RJ3 Spec. No. : C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21

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FQP13N10L — N-Channel QFET® MOSFET FQP13N10L N-Channel QFET® MOSFET 100 V, 12.8 A, 180 mΩ December 2013 Description This N-Channel enhancement mode

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FQD13N10 / FQU13N10 January 2001 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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