150N03 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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CMP150N03/CMB150N03/CMI150N03 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 150N03 is N-ch MOSFETs wit

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HM150N03 N-Channel Enhancement Mode Power MOSFET Description The HM150N03 uses advanced trench technology and design to provide excellent RDS(ON) wit

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CMP150N03/CMB150N03/CMI150N03 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 150N03 is N-ch MOSFETs wit

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150N03(G,D)SL 150 Amps,30 Volts N-CHANNEL MOSFET Featutes  150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A  Low gate charge  Lo

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Silicon N-Channel Power MOSFET ○R CS150N03 D8 General Description： CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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BSO150N03 OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JED

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Description AP150N03D 30V N-Channel Enhancement Mode MOSFET The AP150N03D uses advanced trench technology to provide excellent RDS(ON), low gate cha

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150N03(G,D)SL 150 Amps,30 Volts N-CHANNEL MOSFET Featutes  150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A  Low gate charge  Lo

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UNISONIC TECHNOLOGIES CO., LTD UT150N03 Preliminary 150A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT150N03 uses advanced

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Description AP150N03NF 30V N-Channel Enhancement Mode MOSFET The AP150N03NF uses advanced trench technology to provide excellent RDS(ON), low gate c

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CMP150N03/CMB150N03/CMI150N03 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 150N03 is N-ch MOSFETs wit

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BSC150N03LD G OptiMOS™3 Power-Transistors Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS • Optimized technology for DC/DC c

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UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT150N03 is a N-cha

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BSO150N03MD G OptiMOS™3 M-Series Power-MOSFET Features • Dual N-channel • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for Hi

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CMP150N03/CMB150N03/CMI150N03 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 150N03 is N-ch MOSFETs wit

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VBZM150N03 N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configura

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150N03MD-VB www.VBsemi.com 150N03MD-VB Datasheet Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.016 at VGS = 10 V 30 0.0

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N-Channel Power MOSFET General Features  VDS =30V,ID =150A RDS(ON) <1.6 mΩ @ VGS=10V RDS(ON) <2.4 mΩ @ VGS=4.5V  Improved dv/dt capability  High de

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