16BIT Datasheet | Specifications & PDF Download

K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to

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K4M281633F - R(B)E/N/G/C/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add

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K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0

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Memory ICs BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W 64×16bits serial EEPROM BR93LC46-W / BR93LC46F-W /

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HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x

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HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x

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HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x

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HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with E

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HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with E

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HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with E

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HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with E

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HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with E

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HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui

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K4E171611C, K4E151611C K4E171612C, K4E151612C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,57

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IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchro

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KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048

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