Toshiba
TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY
Rating:
1
★
(14 votes)
ISSI
IS45VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou
Rating:
1
★
(8 votes)
ISSI
IS46LR16200D - 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43/46LR16200D
1M x 16Bits x 2Banks Mobile DDR SDRAM
Description
The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM o
Rating:
1
★
(7 votes)
ISSI
IS42VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou
Rating:
1
★
(6 votes)
ISSI
IS45VM32400H - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400H
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchrono
Rating:
1
★
(5 votes)
Winbond
W9464G6IB - 1M X 4 BANKS X 16 BITS DDR SDRAM
www.DataSheet.co.kr
W9464G6IB 1M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
Rating:
1
★
(5 votes)
Sanyo Semicon Device
LE28CV1001T-12 - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
Rating:
1
★
(4 votes)
Sanyo Semicon Device
LE28FV4001M - 4MEG (52488 x 8 Bits) Flash Memory
Ordering number : EN*5468
CMOS LSI
LE28FV4001M, T, R-20/25
4MEG (52488 × 8 Bits) Flash Memory
Preliminary Overview
The LE28FV4001M, T, R Series are
Rating:
1
★
(4 votes)
ISSI
IS43LR16400B - 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS43/46LR16400B
1M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16400B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRA
Rating:
1
★
(4 votes)
Sanyo
LC35W1000BM - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
Ordering number : ENN*6624
CMOS IC
LC35W1000BM, BTS-70U/10U
Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM
Preliminary Overview
The LC35
Rating:
1
★
(4 votes)
ISSI
IS42VM32400H - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400H
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchrono
Rating:
1
★
(4 votes)
Winbond
W9464G6JH - 1M X 4 BANKS X 16 BITS DDR SDRAM
www.DataSheet.co.kr
W9464G6JH 1M 4 BANKS 16 BITS DDR SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
Rating:
1
★
(4 votes)
ISSI
IS42VM16200C - 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42SM16200C IS42RM16200C IS42VM16200C
1M x 16Bits x 2Banks Low Power Synchronous DRAM
Description
These IS42SM/RM/VM16200C are low power 33,554,432
Rating:
1
★
(4 votes)
ISSI
IS42VM16400K - 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42SM/RM/VM16400K
1M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM
Rating:
1
★
(4 votes)
Sanyo Semicon Device
LE28C1001T - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
Rating:
1
★
(3 votes)
Sanyo Semicon Device
LE28C1001T-12 - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
Rating:
1
★
(3 votes)
Sanyo Semicon Device
LE28C1001T-15 - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
Rating:
1
★
(3 votes)
Sanyo Semicon Device
LE28CV1001M - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
Rating:
1
★
(3 votes)
Sanyo Semicon Device
LE28CV1001T-15 - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
Rating:
1
★
(3 votes)
ISSI
IS45RM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou
Rating:
1
★
(3 votes)
