1M-bits Datasheet | Specifications & PDF Download

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www.DataSheet.co.kr W9464G6JH 1M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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IS43/46LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM o

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

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IS43/46LR16400B 1M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16400B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRA

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www.DataSheet.co.kr W9464G6IB 1M × 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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IS42/45SM/RM/VM32400H Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are

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IS43/46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32400F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous D

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W986416DH GENERAL DESCRIPTION 1M × 4 BANKS × 16 BITS SDRAM W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as

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K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI

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IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchro

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