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K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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BL24CM1A 1M bits (131,072×8) Features ⚫ Compatible with all I2C bidirectional data transfer protocol ⚫ Memory array: – 1024 Kbits (128 Kbytes) of EE

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IS42VM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized a

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IS43/46LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM o

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

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www.DataSheet.co.kr W9864G6JH 1M  4 BANKS  16 BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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IS42/45SM/RM/VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchrono

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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IS42/45SM/RM/VM32400H Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728

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IS43/46LR32400G 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32400G is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DR

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IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM orga

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IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organ

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Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

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Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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IS43/46LR16400B 1M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16400B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRA

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IS43/46LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM o

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m o c . 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .D w w w 4Bank x 1M x 16bits Synchronous

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