2N20 Datasheet | Specifications & PDF Download

MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commu

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isc N-Channel MOSFET Transistor IXTP32N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche volta

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X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA72N20X3 IXFP72N20X3 IXFQ72N20X3 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2

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isc N-Channel MOSFET Transistor IXFA72N20X3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche volt

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP72N20X3M VDSS = ID25

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X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA72N20X3 IXFP72N20X3 IXFQ72N20X3 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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isc N-Channel MOSFET Transistor IXTA32N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche volta

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat

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FQP32N20C / FQPF32N20C — N-Channel QFET® MOSFET FQP32N20C / FQPF32N20C N-Channel QFET® MOSFET 200 V, 28 A, 82 mΩ November 2013 Features • 28 A, 200

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File No. 12 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OOCD5LJD Solid State Division Power Transistors 2N2015 2N2016 RCA 2N20

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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isc N-Channel MOSFET Transistor IXFP72N20X3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche volt

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for

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