2N3055 Datasheet | Specifications & PDF Download

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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2N3055H 15A Power Transistors Features: • The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head po

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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( DataSheet : www.DataSheet4U.com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary t

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Complementary Silicon High-Power Transistors 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) These PowerBase complementary transistors are designed fo

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2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−pur

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2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and

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2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The 2N3055 is a silicon NPN transistor in a T

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( DataSheet : www.DataSheet4U.com ) 2N3055ESMD Dimensions in mm (inches). 0.89 (0.035) min. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 3.60

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2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar N

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Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applica

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltag

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Curr

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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SILICON NPN POWER TRANSISTOR 2N3055 Features: • High Gain At High Current. • Hermetic TO-3 (TO-204AA) Metal Package. • Ideally Suited For General Purp

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2N3055 NPN Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/407 • TO-3 (TO-204AA) Package • Designed for General

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Power Transistor (NPN) Features • General Purpose Switching and Amplifier Applications • RoHS Compliant Power Transistor (NPN) 2N3055 Mechanical Dat

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