2N7002-G Datasheet | Specifications & PDF Download

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

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XP2N7002KU Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS RDS(ON) ▼ Surf

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NP2N7002 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N7002 has been designed to minimize the on-state resistance (RD

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N-Channel MOSFET – ESD Protected GENERAL DESCRIPTION The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced

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Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

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Dual N-Channel MOSFET DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ME2N7002D1KW-G(Green) • Low On-Resistance • Fast Switching Speed • Low

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N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023D2-G is the N-Channel logic enhancement mode power field effect t

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www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RD

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC–74 L2N7002DMT1G S-L2N7002DMT1G • We declare that the material of pr

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723 • Pb−Free Package is Available. • ESD Protected:2000V • S- Pr

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Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special des

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G2N7002 Description Package Dimensions 1/3 N-CHANNEL TRANSISTOR N-channel enhancement-mode MOS TRANSISTOR REF. A B C D E F Millimeter Min. Max. 2.

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N-Channel Enhancement Mode Power MOSFET PE2N7002 General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free p

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V

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ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhance

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2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low T

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MOSFET 2N7002K-HF N-Channel RoHS Device Halogen Free Features -Small Signal MOSFET. -ESD protected: 1000V. Marking: 702 Equivalent Circuit D G : Gate

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