2N7002-G Datasheet | Specifications & PDF Download

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2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

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Description AP2N7002AL 60V N-Channel Enhancement Mode MOSFET The AP2N7002AL uses advanced trench technology to provide excellent RDS(ON), low gate c

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AP2N7002K-HF-VB AP2N7002K-HF-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V I

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Description AP2N7002BI 60V N-Channel Enhancement Mode MOSFET The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate c

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General Description FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power fi

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CRMLTL2N7002K N-Channel 60V, 1.7Ω Typ. Power MOSFET Description Features l 60V, 0.3A RDS(ON) Typ = 1.7 Ω @ VGS = 10V RDS(ON) Typ = 2.0 Ω @ VGS =

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ME2N7002E-VB ME2N7002E-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA)

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AP2N7002K-VB AP2N7002K-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA)

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2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc

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Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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2N7002E-T1-GE3-VB 2N7002E-T1-GE3-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10

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2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • D

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2N7002 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 typ

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 • Pb−Free Package is Available. L2N7002DW1T1G/T3G MAXIMUM RATIN

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motoro

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2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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