2P-channel Datasheet | Specifications & PDF Download

-30V, -25A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT5 use advanced trench technology and design to provide excellent RDS(on) with low g

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-30V, -20A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT use advanced trench technology and design to provide excellent RDS(on) with low ga

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MMD80R1K2P Final Datasheet MMD80R1K2P 800V 1.2Ω N-channel MOSFET  Description MMD80R1K2P is power MOSFET using Magnachip’s advanced super junction t

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Ordering number : ENA1542 Monolithic Linear IC LV47002P Overview For Car Audio Systems 4-Channel BTL Power Amplifier The LV47002P is the IC for 4

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XP65AN1K2P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist

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FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 combines the exceptional performan

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FDW262P June 2001 FDW262P 20V P-Channel PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is produced using Fairchild Sem

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Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up to Tjmax

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Features  P-Channel，-2.5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Test

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FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode October 2006 FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky

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® STP12PF06 P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET™ POWER MOSFET TYPE STP12PF06 s s s s V DSS 60 V R DS(o n) < 0.20 Ω ID 12 A www.DataSh

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For hig

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FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.5mΩ at VGS = -4.5

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Isc N-Channel MOSFET Transistor TK12P60W ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100

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XP232P0501TR-G P-channel MOSFET -30V, -0.45A ETR11039-001 ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝1.25Ω@VG

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MOSFET – P-Channel, POWERTRENCH) -150 V, -2 A, 307 mW FDMC86262P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTR

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Silicon N-Channel Power MOSFET CRTD032N03L2P General Description： CRTD032N03L2P , the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CRTM045N03L2P General Description： CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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http://www.ncepower.com NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide e

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HY3712P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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