DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP.
NEC
B1261-Z - 2SB1261-Z
DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier a.
LGE
2SB1261 - PNP Transistor
2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATIN.
Inchange Semiconductor
2SB1261-K - Silicon NPN Power Transistor
isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2S.
BLUE ROCKET ELECTRONICS
2SB1261 - Silicon PNP transistor
2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE ，，。 Excelle.
BLUE ROCKET ELECTRONICS
2SB1261L - Silicon PNP transistor
2SB1261L Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package. / Features hFE ，，。 Excel.
GME
2SB1261 - PNP Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2S.
JCET
2SB1261 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat).
NEC
2SB1261-Z - PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier a.
TRANSYS Electronics Limited
2SB1261-Z - Plastic-Encapsulate Transistors
Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) T.
JILIN SINO
2SB1261 - PNP Epitaxial Silicon Transistor
PNP PNP Epitaxial Silicon Transistor R 2SB1261 MAIN CHARACTERISTICS IC VCEO PC -3A -60V 2W 、 APPLICATIONS Designed for Audio Frequency Am.
