2SB1386-R Datasheet | Specifications & PDF Download

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low col

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2SB1386 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features ,, 2SD2098 。 Lo

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB =

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Elektronische Bauelemente 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fr

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WILLAS S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1386 THRU FM1200-M+ Pb Fr

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Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Rati

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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2SB1386 Epitaxial Planar Transistor PNP Silicon 1 BASE COLLECTOR 3 1 2 EMITTER 3 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Volt

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UNISONIC TECHNOLOGIES CO., LTD 2SB1386 LOW FREQUENCY PNP TRANSISTOR 1 PNP SILICON TRANSISTOR „ FEATURES * Excellent DC current gain characteristic

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SMD Type Low Frequency Transistor 2SB1386 Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current ga

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DATA SHEET 2SB1386 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -5.0 Ampere FEATURES z NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITC

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SMD Type PNP Transistors 2SB1386-HF Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epi

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2SB1 38 6 TRANSISTOR(PNP) FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless o

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Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent

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