| No |
Part Number |
Description |
Manufacture |
PDF |
| 940 |
2SK2000-R |
Power MOSFET
|
Fuji Electric
|
|
| 939 |
2SK2002-01M |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2002-01M
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching |
Inchange Semiconductor
|
|
| 938 |
2SK2002-01MR |
N-channel MOS-FET
2SK2002-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
4,5 |
Fuji Electric
|
|
| 937 |
2SK2003-01M |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2003-01M
DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching |
Inchange Semiconductor
|
|
| 936 |
2SK2003-01MR |
N-channel MOS-FET
2SK2003-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
2,4 |
Fuji Electric
|
|
| 935 |
2SK2004-01L |
N-channel MOS-FET
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
1000V
3, |
Fuji Electric
|
|
| 934 |
2SK2004-01S |
N-channel MOS-FET
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
1000V
3, |
Fuji Electric
|
|
| 933 |
2SK2007 |
Silicon N-Channel MOS FET
2SK2007
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Swi |
Hitachi Semiconductor
|
|
| 932 |
2SK2008 |
Silicon N-Channel MOS FET
2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Swi |
Hitachi Semiconductor
|
|
| 931 |
2SK2009 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
|
| 930 |
2SK2010 |
N-Channel Silicon MOSFET
Ordering number:ENN4319
N-Channel Silicon MOSFET
2SK2010
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package |
Sanyo Semicon Device
|
|
| 929 |
2SK2010 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulato |
Inchange Semiconductor
|
|
